650V, 60mΩ enhancement mode SiC MOSFET in TO-247-4L package for high-efficiency power conversion applications requiring superior switching performance and reduced system size.
| Model Number | C3M0060065K |
| Max. Voltage | 650 V |
| RDS(on) | 60 mΩ |
| Package | TO-247-4L |
| Continuous Drain Current (ID) | 27 A |
| Max. Junction Temperature | 200°C |
| Total Gate Charge (Qg) | 75 nC |
| Input Capacitance (Ciss) | 4250 pF |
The Wolfspeed C3M0060065K is a 650V silicon carbide (SiC) MOSFET designed for high-efficiency power conversion applications. This device leverages the superior properties of SiC technology to provide significantly reduced switching losses and improved thermal performance compared to traditional silicon MOSFETs. The C3M0060065K offers an optimal balance of on-resistance and gate charge for applications requiring high efficiency and power density.
With its 60mΩ on-resistance and TO-247-4L package, the C3M0060065K offers an excellent combination of performance and form factor for applications requiring high efficiency and power density. The 4-lead Kelvin package provides improved performance at high switching frequencies by separating the power and signal source connections, eliminating the influence of source inductance on the drive loop.
Complete electrical, thermal, and packaging specifications for the C3M0060065K SiC MOSFET.
Comprehensive guide to proper gate drive design for Wolfspeed SiC MOSFETs.
SPICE models and design tools for simulating SiC MOSFET performance in your application.
SiC MOSFETs provide several advantages over silicon devices: 1) Lower switching losses due to reduced output capacitance and charge, 2) Higher temperature operation capability (up to 200°C), 3) Zero reverse recovery losses in the body diode, 4) Higher breakdown field strength allowing thinner devices with lower RDS(on). These benefits result in higher efficiency, higher power density, and reduced system size.
SiC MOSFETs typically require a gate voltage of +15V to +18V for full enhancement and -5V to -10V for reliable turn-off. The gate drive circuit should have low inductance to minimize oscillations and ringing. Special attention should be paid to gate driver selection and layout to ensure reliable operation with SiC's fast switching characteristics.
The TO-247-4L package includes an additional Kelvin source pin that allows for separate connections for power and signal sources. This configuration eliminates the source inductance from the drive loop, allowing for more precise control of the gate drive voltage and reduced ringing during switching transitions. This is particularly important for high-frequency applications.
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