650V, 60mΩ SiC MOSFET in TO-247 package for high-efficiency power conversion
| Model Number | C3M0060065K |
| Max. Voltage | 650 V |
| RDS(on) | 60 mΩ |
| Package | TO-247-4L |
| Continuous Drain Current (ID) | 27 A |
| Max. Junction Temperature | 200°C |
| Total Gate Charge (Qg) | 80 nC |
| Input Capacitance (Ciss) | 5475 pF |
The Wolfspeed C3M0060065K is a 650V silicon carbide (SiC) MOSFET designed for high-efficiency power conversion applications. This device leverages the superior properties of SiC technology to provide significantly reduced switching losses and improved thermal performance compared to traditional silicon MOSFETs.
With its 60mΩ on-resistance and TO-247-4L package, the C3M0060065K offers an excellent balance of performance and form factor for applications requiring higher efficiency and power density. The 4-lead Kelvin package provides improved performance at high switching frequencies.
Complete electrical, thermal, and packaging specifications for the C3M0060065K SiC MOSFET.
Download DatasheetComprehensive guide to proper gate drive design for Wolfspeed SiC MOSFETs.
View GuideDetails about the TO-247-4L package mechanical dimensions and thermal properties.
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SiC MOSFETs offer several advantages over silicon MOSFETs including lower switching losses, higher switching frequencies, higher temperature operation, and reduced system size. The wide bandgap properties of SiC enable these improvements, making SiC devices ideal for high-efficiency power conversion applications.
SiC MOSFETs require careful gate drive design. Key considerations include proper gate voltage levels (typically +15V to +18V for on-state), lower gate resistance for faster switching, and adequate drive current capability. Unlike silicon MOSFETs, SiC devices benefit from negative gate voltage during turn-off (-5V to -10V) to prevent false turn-on during high dv/dt events.
The TO-247-4L package includes an additional Kelvin source pin that allows for separate connections for power and signal sources. This configuration eliminates the source inductance from the drive loop, allowing for more precise control of the gate drive voltage and reduced ringing during switching transitions. This is particularly important for high-frequency applications.
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