Wolfspeed SiC MOSFET Distributor
Silicon Carbide Power MOSFETs for Next-Generation Power Electronics
✓ C3M/C2M Series in Stock
✓ Technical Support
Silicon Carbide Power MOSFETs for Next-Generation Power Electronics
Up to 50% lower switching losses compared to silicon IGBTs. Enable higher efficiency power conversion systems.
Operating temperatures up to 175°C+ with better thermal conductivity than silicon devices.
Switch at higher frequencies with lower losses, enabling smaller magnetics and passive components.
Smaller device size for equivalent power handling. Reduce system size and weight significantly.
The C3M series represents Wolfspeed's latest 3rd generation silicon carbide MOSFET technology, offering industry-leading performance with the lowest on-resistance and switching losses.
| Voltage | RDS(on) Range | Package |
|---|---|---|
| 650V | 15mΩ - 60mΩ | TO-247, D2PAK |
| 900V | 20mΩ - 65mΩ | TO-247, D2PAK |
| 1200V | 8mΩ - 160mΩ | TO-247, TO-263 |
| 1700V | 20mΩ - 1000mΩ | TO-247 |
The C2M series offers proven 2nd generation SiC MOSFET technology with excellent performance and cost-effectiveness for high-volume applications.
| Voltage | RDS(on) Range | Package |
|---|---|---|
| 650V | 28mΩ - 80mΩ | TO-247, D2PAK |
| 900V | 35mΩ - 160mΩ | TO-247, D2PAK |
| 1200V | 16mΩ - 320mΩ | TO-247, TO-263 |
Standard through-hole package for high-power applications
4-lead Kelvin source package for high-speed switching
Surface mount package for automated assembly
Surface mount package with Kelvin connection
SPICE models and PLECS models available for circuit simulation and design verification.
Detailed application guides for gate drive design, thermal management, and PCB layout.
Evaluation boards and reference designs to accelerate your development process.
Our FAE team provides design-in support, schematic review, and troubleshooting assistance.
Get competitive pricing and availability for Wolfspeed SiC MOSFETs. Our technical team can assist with part selection.