650V, 65mΩ enhancement mode SiC MOSFET in TO-247-3L package for high-efficiency power conversion applications requiring superior switching performance and reduced system size.
| Model Number | C3M0065065K |
| Max. Voltage | 650 V |
| RDS(on) | 65 mΩ |
| Package | TO-247-3L |
| Continuous Drain Current (ID) | 20 A |
| Max. Junction Temperature | 200°C |
| Total Gate Charge (Qg) | 105 nC |
| Input Capacitance (Ciss) | 5250 pF |
The Wolfspeed C3M0065065K is a 650V silicon carbide (SiC) MOSFET designed for high-efficiency power conversion applications. This device leverages the superior properties of SiC technology to provide significantly reduced switching losses and improved thermal performance compared to traditional silicon MOSFETs. The C3M0065065K offers an optimal balance of on-resistance and gate charge for applications requiring high efficiency and power density.
With its 65mΩ on-resistance and TO-247-3L package, the C3M0065065K offers an excellent combination of performance and form factor for applications requiring higher efficiency and power density. The device is designed for use in hard-switching applications where SiC's superior switching characteristics provide significant advantages over silicon devices.
Complete electrical, thermal, and packaging specifications for the C3M0065065K SiC MOSFET.
Comprehensive guide to proper gate drive design for Wolfspeed SiC MOSFETs.
SPICE models and design tools for simulating SiC MOSFET performance in your application.
SiC MOSFETs provide several advantages over silicon devices: 1) Lower switching losses due to reduced reverse recovery in the body diode, 2) Higher switching frequencies enabling smaller magnetic components, 3) Higher temperature operation capability (up to 200°C), 4) Higher breakdown field strength allowing thinner devices with lower RDS(on). These benefits result in higher efficiency, higher power density, and reduced system size.
SiC MOSFETs typically require a gate voltage of +15V to +18V for full enhancement and -5V to -10V for reliable turn-off. The gate drive circuit should have low impedance to minimize switching time and reduce losses. Special attention should be paid to gate ringing and overvoltage protection due to the fast switching characteristics of SiC devices.
Thermal design for SiC MOSFETs follows similar principles to silicon devices but takes advantage of the higher junction temperature capability (200°C). Calculate the total power dissipation (conduction + switching losses) and ensure the thermal resistance from junction to ambient is low enough to maintain the junction temperature below the maximum rating under worst-case conditions. SiC's superior thermal conductivity often allows for smaller heatsinks than equivalent silicon solutions.
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