Cree RF Components Distributor
GaN HEMTs & MMICs for 5G, Radar & Satellite Communications
✓ GaN on SiC
✓ RF Design Support
GaN HEMTs & MMICs for 5G, Radar & Satellite Communications
Cree (Wolfspeed) RF components leverage the superior properties of Gallium Nitride (GaN) on Silicon Carbide (SiC) substrate technology. These devices deliver unmatched power density, efficiency, and bandwidth for demanding RF applications.
High-performance GaN HEMT transistors for power amplifier designs. Available in various frequency bands and power levels to meet diverse application requirements.
| Frequency Range | DC - 100 GHz |
| Output Power | 10W - 500W |
| Gain | Up to 20 dB |
| Efficiency | Up to 80% |
| Operating Voltage | 28V, 40V, 50V |
Monolithic Microwave Integrated Circuit (MMIC) amplifiers provide complete RF amplification solutions in compact packages. Ideal for systems requiring high integration and consistent performance.
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